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| EIC5359-4 ISSUED 5/15/2006 5.3-5.9 GHz 4-Watt Internally Matched Power FET Excelics EIC5359-4 FEATURES * * * * * * 5.3- 5.9GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency Hermetic Metal Flange Package YM SN ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.3-5.9GHz VDS = 10 V, IDSQ 1100mA Gain at 1dB Compression f = 5.3-5.9GHz VDS = 10 V, IDSQ 1100mA Gain Flatness f = 5.3-5.9GHz VDS = 10 V, IDSQ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 1100mA f = 5.3-5.9GHz Drain Current at 1dB Compression f = 5.3-5.9GHz Output 3rd Order Intermodulation Distortion f=10MHz 2-Tone Test. Pout=25.5 dBm S.C.L Vds = 10 V, IDSQ 65% IDSS f = 5.9GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.5 9.5 TYP 36.5 10.5 MAX UNITS dBm dB 0.6 34 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6 o dB % 1400 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA Note: 1) Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 43.2mA -7.2mA 35.5dBm 175 C o -65 to +175 C o CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3dB Compression 175 oC -65 to +175 oC 25W Vds Vgs Igsf Igsr Pin Tch Tstg Pt 25W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised May 2006 |
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